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Power Management IC Series for Automotive Body Control
Antenna Driver
BD6934FV
No.09039EBT03
Description This 1ch half-bridje pre-driver for 125kHZ drive with a built-in oscillation circuit is equipped the driving current adjustment function.
Features 1)Pre-driver for driving MOS-FET 2)4MHz ceramic resonator or external pulse are available 3)Driving current adjustment function (Dependence on power supply voltage) 4)Stand-by current 0Atyp. 5)Built-in the resistance between Gate to Source of FET 6)Built-in FET synchro on protect 7)Built-in thermal shutdown 8)Built-in under voltage lockout protection(UVLO)
Applications Usable in driving low frequency , the likes of TPMS and smart entry system.
Absolute Maximum RatingsTa=25 Parameter Supply voltage Power dissipation Operating temperature range Storage temperature range Junction temperature Symbol Vcc1,Vcc2 Pd Topr Tstg Tjmax Rating 12 562 -4085 -55150 150 Unit V mW
Reduced by 4.496mW/,when mounted on a glass epoxy board (70mmx70mmx1.6mm)
Operating range (Ta=25) Parameter Symbol Operating range Unit V V V V Supply voltage Vcc1,Vcc2 3.58 RP,RN voltage Vrp,Vrn VCC2 XOUT,RT,CT voltage Vxout,Vrt,Vct VCC1 Input voltage VIN -0.3VCC1 *This product described in this specification isn't judged whether it applies to COCOM regulations.
It should not be exported without authorization from the appropriate government.
*This product is not designed for protection against radioactive rays. *Status of this document
The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document, formal version takes priority.
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1/12
2009.09 - Rev.B
BD6934FV
Electrical characteristicsUnless otherwise specified, VCC1=VCC2=3.58V,Ta=-4085
Limit Typ.
3.5 -
Technical Note
Parameter Circuit current VCC drive current
VCC stand-by current
Symbol
Min.
-
Max.
7 10
Unit
Conditions
Measurement circuit Fig.31 Fig.32 Fig.33 Fig.33 Fig.33 Fig.33 Fig.32 Fig.32 Fig.34 Fig.34 Fig.34 Fig.34 Fig.33 Fig.34 Fig.31 Fig.32
Icc1 Icc2
mA A V V V V A A % % % sec V V A A
IN=High IN=Low Io=-5A Io=5A Io=-5A Io=5A Vo=0V Vo=12V VCC1=VCC2=3.5V VCC1=VCC2=4V VCC1=VCC2=7V *
[Output] Upper side output voltage H Upper side output voltage L Lower side output voltage H Lower side output voltage L Output leak current H Output leak current L ON Duty 3.5V ON Duty 4V ON Duty 7V Oscillating start time * InputIN,SEL Input voltage H Input voltage L Input current H Input current L
VOHH VOHL VOLH VOLL ILH ILL D ON3.5 D ON4 D ON7 T OSC VIH V IL IIH IIL
VCC-0.4 VCC-0.4 6.84 13 44 VCC*0.8 10 -
VCC-0.2 0.2 VCC-0.2 0.2 9.17 15 49 -
0.4 0.4 10 10 11.5 17 54 8 1.3 150 10
VIN=VCC VIN=0V
Under voltage lockout protection UVLO ON voltage UVLO OFF voltage Trianglar wave generation RT voltage CT charge current CT discharge current VRT ICTC ICTD 0.63 346 300 0.7 432 430 0.77 518 560 V A A VCT1.1V VCT1.1V Fig.35 Fig.35 Fig.35 VUVON VUVO FF 2.7 2.9 3 3.2 3.3 3.5 V V Fig.31 Fig.31
* Oscillating start time Time till operating output, after UVLO turn off during oscillating ceramic resonator. This product is not designed for protection against radioactive rays. Dimension
Product No.
D6934
Lot No.
Fig.1 SSOP-B16 UNIT:mm
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2/12
2009.09 - Rev.B
BD6934FV
Reference Data
5 4 3 2 1 0 0 3 6 9 12
Ta=85 Ta=25 Ta=-40
Technical Note
4.0
0.0
3.0
V_OUTN-VCC2[V]
-0.3
Ta=-40 Ta=25
ICC2[A]
ICC1[mA]
2.0
-0.6
Ta=85
1.0
Ta=-40 Ta=25
Ta=85
-0.9
0.0 0 3 6 9 12
-1.2 0 5 10 15 20
VCC1,VCC2[V]
VCC1,VCC2[V]
I_OUTP[mA]
Fig.2 VCC drive current
0.0 1.2
Fig.3 VCC stand-by current
Fig.4 output voltage H (Vcc3.5V)
1.2
-0.3
0.9
Ta=25 T=a25
0.9
V_OUTN(V)
-0.6
Ta=85
V_OUTN[V]
V_OUTN[V]
Ta=-40
Ta=85
0.6
Ta=-40
0.6
Ta=-40
Ta=85 Ta=25
-0.9
0.3
0.3
-1.2 0 5 10 15 20
0.0 0 5 10 15 20
0.0 0 5 10 15 20
I_OUTP[mA]
I_OUTN[mA]
I_OUTN[mA]
Fig.5 output voltage H (Vcc8V)
4 4
Fig.6 output voltage L (Vcc3.5V)
Fig.7 output voltage L (Vcc8V)
3
3
I_OUTP[A]
I_OUTP[A]
OUTP
2
Ta=85 Ta=25
2
Ta=85 Ta=25
1
Ta=-40
1
Ta=-40
OUTN
0 0 3 6 9 12
0 0 3 6 9 12
VCC1,VCC2[V]
VCC1,VCC2[V]
Fig.8 Output leak current H
Fig.9 Output leak current L
0.8
Fig.10 ON Duty3.5V
0.6
V_RT[V]
OUTP
OUTP
From Left Ta=-40 Ta=25 Ta=85
0.4
OUTN
OUTN
0.2
0.0 0.0 0.7 1.4 2.1 2.8 3.5
V_IN[V]
Fig.11 ON Duty4V
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Fig.12 ON Duty7V
Fig.13 Input voltage H / L (Vcc3.5V)
3/12
2009.09 - Rev.B
BD6934FV
Technical Note
0.8
0.8
0.8
0.6
0.6
0.6
V_RT[V]
V_RT[V]
0.4
0.4
V_RT[V]
From Left Ta=-40 Ta=25 Ta=85
From Left Ta=-40 Ta=25 Ta=85
From Left Ta=-40 Ta=25 Ta=85
0.4
0.2
0.2
0.2
0.0 0.0 1.0 2.0 3.0 4.0
0.0 0.0 2.0 4.0 6.0
0.0 0.0 2.0 4.0 6.0 8.0
V_IN[V]
V_IN[V]
V_IN[V]
Fig.14 Input voltage H / L (Vcc4V)
Fig.15 Input voltage H / L (Vcc7V)
Fig.16 Input voltage H / L (Vcc8V)
4
200
4.0
3
150
3.0
I_IN[A]
V_OUTP[V]
I_IN[A]
Ta=85
2
Ta=85
100
Ta=25 Ta=-40
2.0
From Left Ta=85 Ta=25 Ta=-40
1
50
1.0
0 0 4 8 12
0 0 3 6 9 12
0.0 0 1 2 3 4
VCC1,VCC2[V]
VCC1,VCC2[V]
VCC1,VCC2[V]
Fig.17 Input current H
Fig.18 Input current L
Fig.19 UVLO ON/OFF voltage
1.0 0.8
1000
From Left Ta=-40 Ta=25 Ta=85
500
V_RT[V]
0.6
Ta=85
I_CT[A]
9 12
0
0.4 0.2 0.0 0 3
Ta=25 Ta=-40
-500
-1000
6
0.0
0.3
0.6
0.9
1.2
1.5
VCC1,VCC2[V]
V_CT[V]
Fig.20 RT voltage
Fig.21 CT charge-discharge current
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4/12
2009.09 - Rev.B
BD6934FV
Block diagram CSTCR4M00G55B-R0 VCC1 XIN 9 1M On duty control / Synchro on protect
Technical Note
RN 8 N.C. 7
XOUT 10 680 CT 11 1000p RT 12 4.8k SEL 13
Counter VCC1 6 Triangle Oscillator VCC2 5 RP VCC2 100k Function Logic OUTP VCC2 VCC1 Function Logic OUTN 20k 4 20k OUTP 3 N.C. 2 OUTN 1 SP8M3 1u
IN 14 100k GND 15 PGND 16
UVLO TSD Fig.22 Resonator mode VCC1
XIN 9 125kHz XOUT 10 Counter CT 11 1000p RT 12 4.8k SEL 13 100k IN 14 100k GND 15 PGND 16 VCC1 UVLO TSD Triangle Oscillator 1M
On duty control / Synchro on protect
RN 8 N.C. 7 VCC1 6 VCC2 5 RP 1u
VCC2 Function Logic OUTP VCC2 Function Logic OUTN 20k
4 20k OUTP 3 N.C. 2 OUTN 1 SP8M3
Fig.23 External pulse mode * Product No.and constants of external devices are recommended condition.
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5/12
2009.09 - Rev.B
BD6934FV
Pin name PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin name OUTN N.C. OUTP RP VCC2 VCC1 N.C. RN XIN XOUT CT RT SEL IN GND PGND Function
Technical Note
Nch FET GATE connection N.C. Pch FET GATE connection For pull-up resistance of Pch FET Gate Power VCC terminal Signal VCC terminal N.C. For pull - down resistance of Nch FET Gate Resonator connection Resonator connection Capacitor connection for triangular wave generation Capacitor connection for triangular wave generation Input terminal for mode selection(Resonator mode:L,External pulse mode:H) Input terminal (Stand-by:L, Enable:H) Signal GND terminal Power GND terminal VCC1
I/O Circuit Diagram
6.6K SEL IN 100K 4p
GND GND Fig.24 VCC1
GND SEL(13pin) IN(14pin) VCC1
GND
VCC1
250 XIN 6K 1M
100
3.3K
100 4p
GND VCC1
GND
GND
GND
GND
XOUT Fig.25 XIN(9pin) XOUT(10pin)
GND
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6/12
2009.09 - Rev.B
BD6934FV
VCC1
Technical Note
700 RT
700
700
Fig.26 GND VCC1 VCC1
RT(12pin) VCC1
CT
GND
GND Fig.27
GND
GND
CT(11pin)
VCC2
VCC2
15
OUTP OUTN
15
PGND
PGND
20k
RP RN
Fig.28
OUTN(1pin)
OUTP(3pin)
RP(4pin)
RN(8pin)
PGND
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7/12
2009.09 - Rev.B
BD6934FV
Truth table Input Pin Name Pin No. XIN 9 4MHz 4MHz 125KHz 125KHz IN 14 L H L H SEL 13 L L L H OUTP 3 Hiz Enable Hiz Enable Output OUTP 1 Hiz Enable Hiz Enable
Technical Note
Resonator 4MHz External signal 125KHz
Timing chart XIN 4MHz Internal CLK H 125kHz L period 8usec Variation as to supply voltage
CT
H OUTP L H OUTN L ON time Fig.29 Dead time Timing chart(driving) Dead time
VCC (=IN)
8V 7V 3.2V 3.0V 0V
OUTP
Hi
Enable
Hiz
OUTN
Hi
Enable
Hiz
Fig.30 VCC-OUTPOUTN
Operating range
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8/12
2009.09 - Rev.B
BD6934FV
Measurement circuit
Technical Note
VIL A IIH 16 15 14 4.8K 1000P 13 12 11 10 9 16 15 A IIL 14 13 4.8K 1000P 12 11 10 9
BD6934FV
VCC 5K 5K V A ICC1 VCC 2 3 4 5 6 7 8
BD6934FV
2 3 A 4 ILH ILL Vo 5 6 A 7 Icc2 Vcc 8
A ILH ILL Vo
Fig.31 ICC1,IIH,VOVDN,VUVOFF
Fig.32 ICC2,ILH,ILL,IIL
VIH 4.8K 1000P 16 15 14 13 12 11 10 9 16 15 14
VIL 4.8K
ceramic rasonator
1000P
13
12
11
10
9
BD6934FV
2 3 4 5 6 7 8
BD6934FV
2 3 4 5 6 7 8
VOLH VOLL
V
V VOHH VOHL
VCC
Oscillo scope
DON TOSC
VCC
Fig.33 VOHH,VOHL,VOLH,VOLL,VIH
Fig.34 DON3.5,DON4,DON7,TOSC,VIL
ICTC A V VRT 4.8K 1000P ICTD 16 15 14 13 12 11 10 9
BD6934FV
2 3 4 5 6 7 8
VCC
Fig.35 VRT,ICTC,ICTD
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9/12
2009.09 - Rev.B
BD6934FV
Operating explanation
Technical Note
Driving current adjustment function. This IC control the duty of output pulse in response to supply voltage(Vcc). This function is allowed to control driving current and adjust the arrival range of radio frequency. The relationship between supply voltage(Vcc) and output(OUTN) is as shown in the following figure. This data is typical , refer to the electrical characteristics in regard to variation.
Duty (%) 49
15 9.17
3.5 4
7
8
Vcc(v)
Fig.36 Supply voltage (Vcc) - Output (OUTN) Duty
External FET Connect
PchMOS to OUTP and Nch MOS to OUTN VdsVCC, VgsVCC, Allowable current Output current There is a possibility that upper and lower FET turn on at the same time. It is recommended to use 1000pF or smaller at input capacitor of external FET. However , these characteristics change in the layout pattern and parts variation and so on. Make evaluations with using board in mass production.
Oscillation precision and condition The oscillation precision depends on the condition of ceramic resonator. This IC is evaluated with the ceramic resonator (Product No.CSTCR4M00G55B-R0) of MURATA manufacturing. In the range of Vcc 2.2~2.7V, this IC stops its oscillation without disenabling the ceramic resonator. OPERATING NOTES 1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a specialmode where the absolute maximum ratings may be exceeded is anticipated. 2) GND potential Ensure a minimum GND pin potential in all operating conditions. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Pin short and mistake mounting Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins and the power supply and GND pins caused by the presence of a foreign object may result in damage to the IC. Ensure a minimum GND pin potential in all operating conditions. 5) Actions in strong magnetic field Keep in mind that the IC may malfunction in strong magnetic fields.
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10/12
2009.09 - Rev.B
BD6934FV
Technical Note
6) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC. 7) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when the resistors and transistors are connected to the pins as shown in the following figure, The P/N junction functions as a parasitic diode when GND > Pin A for the resistor or GND > Pin B for the transistor(NPN). Similarly, when GND > Pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage to input pins. Keep in mind that the IC may malfunction in strong magnetic fields.
Resistor (Pin A)
(Pin B) C
Transistor (NPN)
B E
(Pin B) C E
B N
P+ N P N
P
P+ N N
P+ N
P
P+ N
GND Parasitic elements or
Parasitic elements
GND Parasitic elements or Transistors
P substrate (Pin A) GND Parasitic elements
8) Ground patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external parts, either. 9) Thermal shutdown circuit (TSD) This IC incorporates a built-in TSD circuit for the protection from thermal destruction. The IC should be used within the specified power dissipation range. However, in the event that the IC continues to be operated in excess of its power dissipation limits, the attendant rise in the junction temperature (Tj) will trigger the TSD circuit to turn off all output power elements. The circuit automatically resets once the junction temperature (Tj) drops. Operation of the TSD circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs should never make use of the TSD circuit. 10) External parts Driving current adjustment function in use low accuracy parts (Especially, RT terminal connection resistance, CT terminal connection capacitor and resonator ) may malfunction. The external parts use highly accuracy, and be careful additional impedance and capacitor for wiring pattern. 11)RP, RN terminal The resistance is built in between OUTP and RP, and OUTN and RN to turn off external MOS - FET in stand - by. Please wire with RP=VCC2 and RN =PGND. Improper wiring may result in damage for the penetration current.
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11/12
2009.09 - Rev.B
BD6934FV
Ordering part number
Technical Note
B
D
6
Part No.
9
3
4
F
V
-
E
2
Part No.
Package FV: SSOP-B16
Packaging and forming specification E2: Embossed tape and reel
SSOP-B16
5.00.2
16 9

Tape Quantity Embossed carrier tape 2500pcs E2
The direction is the 1pin of product is at the upper left when you hold
6.40.3
4.40.2
0.3Min.
Direction of feed
( reel on the left hand and you pull out the tape on the right hand
)
1
8
0.150.1
1.150.1
0.10
0.1 0.65 0.220.1
1pin
(Unit : mm)
Direction of feed
Reel
Order quantity needs to be multiple of the minimum quantity.
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12/12
2009.09 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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